Texture analysis and epitaxial relationships in Bi2Te3 thin film grown by physical vapor transport on silicon substrates

Omar Concepción, Adolfo Tavira,Jorge Roque,Osvaldo de Melo,A. Escobosa

Applied Surface Science（2019）

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摘要

•Bi2Te3 films were grown by physical vapor transport using elemental Bi and Te sources.•Bi2Te3 epitaxial growth was achieved in both (1 1 1) and (1 0 0) Si substrates.•Twelve-fold symmetry of Bi2Te3 was the consequence of the overlapping of two domains.

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关键词

Topological insulator,Bismuth telluride,Physical vapor transport,Interface

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