Silicon Tunnel Junctions Produced by Ion Implantation and Diffusion Processes for Tandem Solar Cells
IEEE Journal of Photovoltaics(2018)
摘要
This work reports on the fabrication of silicon tunnel junctions that can be used in silicon-based bottom cells for tandem solar cells. The tunnel junction was formed on n-type monocrystalline silicon wafers using the following two different processes: (1) a thermal diffusion of boron followed by an arsenic ion implantation; and (2) successive implantation steps of boron and arsenic ions. For both...
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关键词
Photovoltaic cells,Boron,Silicon,Ion implantation,Junctions,Photovoltaic systems,Diffusion processes
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