Silicon Tunnel Junctions Produced by Ion Implantation and Diffusion Processes for Tandem Solar Cells

IEEE Journal of Photovoltaics(2018)

引用 5|浏览11
暂无评分
摘要
This work reports on the fabrication of silicon tunnel junctions that can be used in silicon-based bottom cells for tandem solar cells. The tunnel junction was formed on n-type monocrystalline silicon wafers using the following two different processes: (1) a thermal diffusion of boron followed by an arsenic ion implantation; and (2) successive implantation steps of boron and arsenic ions. For both...
更多
查看译文
关键词
Photovoltaic cells,Boron,Silicon,Ion implantation,Junctions,Photovoltaic systems,Diffusion processes
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要