Localized Heating in Mo'I'ei-Based Resistive Memory Devices

Layered materials like transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN) have been recently demonstrated as the switching layers in resistive random access memory (RRAM) devices [1]-[3], but their switching mechanisms are not yet well understood. In this work, we show resistive memory switching in MoTe ₂ devices and investigate the thermal origins of their switching behavior using scanning thermal microscopy (SThM). We observe localized heating due to the formation of a conductive plug, which is correlated with electro-thermal simulations, providing the first thermal insights into the operation of such RRAM devices.