Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor

IEEE Transactions on Electron Devices(2018)

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摘要
We propose a new scheme to consider the dielectric (DE) phases inside polycrystalline ferroelectric (FE) materials. The scheme is used to extract material parameters from experimental polarization-electric field (P-E) measurements from the literature. A Sentaurus TCAD structure is constructed with the extracted parameters, and the simulated P-E curve is in a good agreement with the experimental da...
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关键词
Iron,Logic gates,Mathematical model,Capacitance,Graphical models,Distribution functions
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