A $G$ -Band Broadband Balanced Power Amplifier Module Based on Cascode mHEMTs

B. Amado-Rey,Yolanda Campos-Roca,Christian Friesicke,F. van Raay,H. Massler,A. Leuther, O. Ambacher

IEEE Microwave and Wireless Components Letters（2018）

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摘要

The first full G-band power amplifier module demonstrated in GaAs metamorphic high electron mobility transistor (mHEMT) technology has been developed for use as a driver amplifier in instrumentation. The circuit integrated in this module uses a compact balanced cascode topology and is based on a 35-nm mHEMT technology in a grounded coplanar waveguide environment. High compactness is achieved due t...

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关键词

Gain,Power generation,Broadband communication,mHEMTs,Gallium arsenide,Bandwidth,Substrates

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