Effect of annealing temperature on photovoltaic properties of spin coated CdS films.

CdS thin film samples were fabricated using spin coating technique on normal glass and conductive glass substrates and annealed at different temperatures. According to the XRD patterns of films prepared on normal glass substrates, polycrystalline films are consist of single phase of CdS. Films synthesized on conductive glass substrates were employed for photovoltaic measurements. Variation of photovoltaic properties with annealing temperature was investigated. The liquid junction photocell was measured in the electrolyte of Na2S2O3/I2. Then, the short circuit photo current and open circuit photo voltage were measured at room temperature under illumination and under dark using a solar cell simulation system. Optical band gap of CdS film samples was determined by measuring UV-visible spectroscopy.