Replacement Metal Contact Using Sacrificial ILD0 for Wrap Around Contact in Scaled FinFET Technology

S-A. Chew,Steven Demuynck,Liping Zhang,A. Pacco, K. Devriendt,Lieve Teugels,T. Hopf,J. Versluijs,C. Vrancken,A. Dangol,E. Altamirano Sanchez,D. Mocuta,Naoto Horiguchi

2018 IEEE International Interconnect Technology Conference (IITC)（2018）

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摘要

In this work, we propose replacement metal contact (RMC) flow by using sacrificial ILD0 that is suitable for wrap around contact (WAC). RMC minimize erosion of gate plug, spacer and S/D area at scaled contact formation. The concept of the flow has been demonstrated in short loop flow with ~50% contact resistance improvement for both NMOS, Si:P and PMOS, SiGe:B.

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关键词

Wrap Around Contact,Sacrificial ILD0,Tone Reverse Contact Litho,Selective Etch,FinFET

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