Ru Liner Scaling with ALD TaN Barrier Process for Low Resistance 7 nm Cu Interconnects and Beyond
international interconnect technology conference, 2018.
Low resistance Cu interconnects with CVD Ru liner have been demonstrated for 7 nm node. Ru liner thickness reduction has been achieved by replacing PVD TaN with a bilayer PVD Ta and ALD TaN stack, while maintaining adequate Cu fill performance. The newly proposed barrier stack (PVD Ta/AldTaN) with thin Ru liner studied in this paper also ...More
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