Ru Liner Scaling with ALD TaN Barrier Process for Low Resistance 7 nm Cu Interconnects and Beyond

Koichi Motoyama
Koichi Motoyama
Yb. Kim
Yb. Kim
Jk. Choi
Jk. Choi
Jh. Lee
Jh. Lee
Roger A. Quon
Roger A. Quon

international interconnect technology conference, 2018.

Cited by: 1|Views27

Abstract:

Low resistance Cu interconnects with CVD Ru liner have been demonstrated for 7 nm node. Ru liner thickness reduction has been achieved by replacing PVD TaN with a bilayer PVD Ta and ALD TaN stack, while maintaining adequate Cu fill performance. The newly proposed barrier stack (PVD Ta/AldTaN) with thin Ru liner studied in this paper also ...More

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