First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology

C. Potier,S. Piotrowicz,O. Patard,P. Gamarra,P. Altuntas,E. Chartier,C. Dua,J. C. Jacquet,C. Lacam,N. Michel,M. Oualli,S. L. Delage,C. Chang, J. Gruenenpuett

2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC)（2018）

引用 8|浏览72

暂无评分

摘要

This paper presents the simulated results and first small-signal on-wafer measurements of two MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The two three-stages MMIC1 & MMIC2 are operating within a bandwidth of [27.5–31]GHz and [37–39.5]GHz, respectively and demonstrate over these bandwidths a saturated output power of 40dBm and 38dBm, respectively. Each stage use 8×50μm gate width HEMTs fabricated with a 0.15μm gate length on 70μm thick SiC substrate.

查看译文

关键词

MMIC,HEMT,GaN,Ka Band,InAlGaN,GaN

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要