The influence of V/III ratio on GaN grown on patterned sapphire substrate with low temperature AlN buffer layer by hydride vapor phase epitaxy

Nanliu Liu,Qi Wang,Xiaoping Zheng,Shunfeng Li,Yilmaz Dikme,Huan Xiong, Yanzhao Pang,Guoyi Zhang

Journal of Crystal Growth（2018）

引用 3|浏览10

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摘要

•Crack and pits free of 2–4 in. GaN templates were obtained with HVPE technique.•Selective growth of AlN buffer layer and its influence on the GaN nucleation were studied.•The effects of V/III ratio in nucleation step on GaN growth mode were studied.

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关键词

GaN nucleation,PSS,V/III ratio,AlN buffer layer,Growth mode,HVPE

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