Tailoring strain and lattice relaxation characteristics in InGaAs/GaAsP multiple quantum wells structure with phosphorus doping engineering

Minimization of the internal strain in growing high quality strained multiple quantum wells (MQWs) has attracted enormous attention due to their high potential with optimized crystal quality for next-generation diode lasers technology applications. Among which the alternative multilayer structures with high performance of the strain quantum wells are prerequisite in the quantum cascade lasers and vertical cavity lasers. The periodic structure with an appropriate design strain-balanced MQWs are imperative for high performance devices. In present work, the strain compensated InGaAs/GaAsP multiple quantum well structures are developed. By engineering the composition of phosphorus in the barrier layer, i.e., 0.15 at.%, the best performance was achieved with high crystal quality via modulating the indium and phosphorus. Our systematic theoretical and experimental studies are performed upon the strain-balanced values investigations by complementary atomic force microscope and photoluminescence characterizations. The influence of variables on the measurement results and the internal correlated impact factors are discussed in detail. With tailored strain compensated structure, our developed InGaAs/GaAsP MQW opens new opportunities for innovative applications with optimized integration in next-generation diode lasers field.