UV/ozone-process-assisted low-temperature SnO2 thin-film transistors

Bongho Jang,Won-Yong Lee,Taegyun Kim,Sojeong Lee,Jaewon Jang

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)（2018）

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摘要

We report that ultraviolet (UV) ozone post-annealing improves the performance of SnO ₂ thin-film transistors (TFTs) fabricated by the sol-gel method at a low temperature of 300 °C. The SnO ₂ TFT treated with UV ozone post-annealing (two times) shows a field-effect mobility of 0.11 cm ² /Vs, which is more than 40 times higher than the field-effect mobility of SnO ₂ TFTs without UV ozone treatment. Further, the on/off current ratio and subthreshold swing improved to 1.83×10 ⁵ and 2.09 V/dec, respectively.

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关键词

field-effect mobility,ultraviolet ozone post-annealing,TFTs,sol-gel method,on-off current ratio,subthreshold swing,UV-ozone-treatment-assisted low-temperature SnO2 thin-film transistors,temperature 300.0 degC,SnO2

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