Cross-Point Device using Ta2O5/Ta Layer for Synapse Element in Neural Network

Ryo Tanaka,Isao Horiuchi,Yukio Mogi,Yasushi Hiroshima,Yasuhiko Nakashima,Mutsumi Kimura

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)（2018）

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摘要

We have developed a cross-point device using a Ta ₂ O ₅ /Ia layer for synapse elements in neural networks. Horizontal 80 and vertical 80 platinum lines and a Ta ₂ O ₅ /Ia layer between them make 6400 cross-point synapses integrated on a glass substrate. The electrical conductance gradually degrades by flowing current, which is available for modified Hebbian learning. We found that a neural network using the cross-point synapses are able to recognize multiple letters.

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关键词

cross-point synapses,glass substrate,electrical conductance,modified Hebbian learning,vertical platinum lines,horizontal platinum lines,letter recognition,neural network,synapse element,cross-point device

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