Sol-gel processed Mg-doped In2O3 thin-film transistors

Taegyun Kim,Bongho Jang,Sojeong Lee,Won-Yong Lee,Jaewon Jang

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)（2018）

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摘要

We have shown that the magnesium doping effect causes indium oxide with a high negative threshold voltage, close to zero bias, to operate in the enhancement mode, with minimal mobility degradation. At 0.2wt%, the MIO film had a mobility of 11.96 cm ² /Vs-s and a threshold voltage of-4 V, having shifted from -18 V.

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关键词

high negative threshold voltage,minimal mobility degradation,MIO film,thin-film transistors,magnesium doping effect,sol-gel process,In2O3:Mg

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