A Novel Approach to Control Source/Drain Cavity Profile for Device Performance Improvement

Hsien-Ching Lo,Jianwei Peng,Edward Reis,Baofu Zhu,Wei Ma,Seong Yeol Mun,Shashidhar Shintri,El Mehdi Bazizi,Churamani Gaire,Yi Qi,James Chen,Seng Nguon Ting,Owen Hu,Srikanth Samavedam

IEEE Transactions on Electron Devices（2018）

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摘要

We present a novel method to form the source/ drain (S/D) cavity for pFET performance improvement-we named this cavity as doping-assisted cavity as its profile is controlled by the lightly doped drain implantation. By utilizing the enhanced etch rate in chlorine-based dry etch process, the cavity profile is aligned to the arsenic dopant contour, enabling a lower tip height that mitigates short-cha...

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关键词

Cavity resonators,Performance evaluation,Arsenic,Silicon,Logic gates,Stress,Implants

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