Highly transparent, all-oxide, heteroepitaxy ferroelectric thin film for flexible electronic devices

•Epitaxial Pb(Zr0.1Ti0.9)O3 ferroelectric thin films were fabricated on Sn-doped In2O3 transparent electrodes buffered mica.•The averaged transmittance of the PZT-based capacitor in visible region is up to 73%.•Epitaxial PZT thin films present ideal ferroelectricity.•The primitive properties of the capacitor can be retained after enormous bending cycles at high temperature.