Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With ${f}_{\text{max}}$ ~ 0.53 THz
IEEE Transactions on Electron Devices(2018)
摘要
We report on the realization mymargin of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-μm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in ...
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关键词
III-V semiconductor materials,Indium phosphide,Substrates,Heterojunction bipolar transistors,Gold
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