RF Performance of a Highly Linear Power Amplifier EDNMOS Transistor on Trap-Rich SOI

Rui Tze Toh,Diing Shenp Ang,Shyam Parthasarathy,Jen Shuang Wong, Hin Kiong Yap,Shaoqiang Zhang

IEEE Electron Device Letters（2018）

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摘要

Results specific to power amplifiers (PAs) designed using a SOI EDNMOS transistor free of kinks in ID-VD plane and high breakdown voltage are presented. The suppression of the drain current kink and improvement in breakdown voltage are achieved by the omission of the N+ source implant step. Instead, the source junction is realized by an optimized NLDD implant step only, allowing the formation of a...

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关键词

Transistors,Radio frequency,Performance evaluation,Junctions,Implants,Logic gates,Power amplifiers

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