Growth-Temperature Dependence Of Conductivity At The Lacro3/Srtio3 (001) Interface

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A(2019)

引用 7|浏览8
暂无评分
摘要
The effect of growth conditions and postgrowth treatment on the structural and electronic properties of the polar/nonpolar LaCrO3/SrTiO3 (LCO/STO) interface has been investigated. Under low oxygen partial pressure, oxygen vacancies are formed in the STO substrate resulting in metallicity with a measured sheet carrier concentration of 10(16) cm(-2). Annealing postgrowth in flowing oxygen causes the sheet carrier concentration to saturate to 10(13) cm(-2), which is consistent with the reported values of a two-dimensional gas at other polar/STO interfaces. However, growth under nonreducing growth conditions leads to insulating behavior. High-resolution synchrotron x-ray-based structural determination of the atomic-scale structures of both metallic and insulating LCO/STO interfaces shows chemical intermixing and an interfacial lattice expansion. Published by the AVS.
更多
查看译文
关键词
lacro3/srtio3,lacro3/srtio3,conductivity,growth-temperature
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要