Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model

This paper illustrates the usefulness of the physics-based compact device models in investigating the impact of device behavioral nuances on the operation and performance of the circuits and systems. The industry standard MIT virtual source gallium nitride high electron-mobility transistor (GaN HEMT) (MVSG) model is used as the modeling framework to understand the operation of the GaN HEMTs and st...