Statistical analysis of CBRAM endurance

D. Alfaro Robayo,Cecile Nail,Gilbert Sassine,J.F. Nodin,M. Bernard, Q. Raffay,G. Ghibaudo,Gabriel Molas,E. Nowak

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)（2018）

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摘要

In this paper, we address endurance reliability of resistive RAM at array level. To this aim, Al ₂ O ₃ based Conductive Bridging RAM (CBRAM) kb arrays are studied. Maximum number of cycles the memory can sustain is statistically analyzed. Impact of SET and RESET conditions and Al ₂ O ₃ thickness on endurance distributions is discussed. Finally, gradual endurance degradation mechanism is discussed along with defect generation in the resistive layer.

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关键词

RESET conditions,SET conditions,conductive bridging RAM kb arrays,endurance reliability,resistive layer,gradual endurance degradation mechanism,resistive RAM,CBRAM endurance,statistical analysis,Al2O3

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