Ito/Agnw/Ito Stacked Flexible Electrodes

This study demonstrated that the use of a ITO/AgNW/ITO stacked structure could considerably enhance the mechanical flexibility of a transparent conducting oxide while minimizing AgNWs caused rough surface morphology. The bending test showed the electrical resistance variation of the stacked film could reach 1% much lower than that of the initial ITO of 32%. The top ITO also improve the adhesion of AgNWs on ITO. Optimization on the thickness of AgNWs and top ITO layer is necessary for better optical and surface morphological characteristics.