A highly integrated copper sintered SiC power module for fast switching operation

A novel 1200 V and 110 A SiC pin-fin direct cooled six-pack power module with integrated DC-link capacitor and gate driver circuits is presented. The SiC power devices are sintered on a DCB-thick-film combined substrate using a novel copper sinter paste. The copper sintered connection has a shear strength of 73.2 MPa which is comparable to the shear strength of Ag-sintering. The module has a thermal resistance between chip and coolant of 1.4 K/W. By integrating the DC-link capacitor into the module, the parasitic stray inductance of the commutation loop can be reduced by 3x times to the value of 7.2 nH. The parasitic inductances in the high side and low side gate loop have a value of 3.4 nH.