Study of titanium nitride underlayer properties and its influence on tungsten growth
2018 29TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC)(2018)
摘要
The changes in tungsten (W) film growth and resistance are studied using different titanium nitride (TiN) underlayer films. Different precursors and processes used for TiN deposition affect the W growth and film properties. It is important to monitor the changes in incoming TiN resistance as a part of W process qualification. This enables maintaining W process stability and reducing fab downtime due to false fails.
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关键词
tungsten,titanium nitride,underlayer,film growth
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