Development of a High-Performance 3,300V Silicon Carbide MOSFET

To address stringent performance and reliability requirements of industrial and traction power conversion systems we have developed planar 3,300V MOSFETs at a 6-inch SiC-compatible silicon CMOS foundry. By optimizing the unit cell structure and using a deep current-spreading layer we demonstrated a low MOSFET specific on-resistance RDSA=11.2 mΩ·cm2(ID=5A, VGS=15V) and fast switching for the baseline design. Robust short-circuit handling (7.5μs at Vds=1500V and 5.0μs at Vds=2200V) was demonstrated with an alternative unit cell design with RDSA=14.8 mΩ·cm2(ID=5A, VGS=15V).