Starch-based biopolymer electrolyte gated oxide synaptic transistors

Recently, there are increasing interests in eco-friendly electronics. In the present work, water degradable indium-tin-oxide synaptic transistor was proposed. Solution processed starch-based electrolyte acted as gate dielectric. The starch-based electrolyte exhibits extremely strong electrostatic modulation behavior with electric-double-layer (EDL) capacitance of ∼1.6 μF/cm2. The synaptic transistor exhibits a high on/off ratio of ∼1.9 × 107, a small subthreshold swing of ∼99.7 mV/decade and a high field effect mobility of ∼14.9 cm2/Vs, respectively. The oxide synaptic transistor exhibits high stabilities in synaptic responses. Both short-term and long-term synaptic plasticities were mimicked. The proposed oxide synaptic transistors have potential applications in “green” neuromorphic platforms.