Fabrication and Analysis of Vertical Thin Poly-Si Channel Transfer Gate Pixels for a 3-D CMOS Image Sensor

Sung-Kun Park, Il-Ho Song,Hun-Sung Lee,Kyung-Dong Yoo

IEEE Transactions on Electron Devices（2018）

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摘要

This paper reports the process integration and fabrication characteristics of a vertical thin poly-Si channel (VTPC) transfer gate (TG) pixel, which is one of the candidates for future 3-D CMOS image sensor (CIS) applications. The proposed process integration can effectively suppress grain boundary formation at the interface between the photodiode and the poly-Si channel by solid phase epitaxial g...

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关键词

Silicon,Substrates,Logic gates,Epitaxial growth,Fabrication,Junctions,Transistors

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