Improved Performance of Amorphous InGaZnO Thin-Film Transistor by Hf Incorporation in La 2 O 3 Gate Dielectric

The effects of Hf incorporation in La2O3 gate dielectric on the electrical characteristics of amorphous InGaZnO thin-film transistor are studied. With an appropriate dose of Hf, the device performance can be significantly improved, resulting in high saturation mobility of 30.5 cm2V-1s-1, small subthreshold slope of 0.15 V/dec, and negligible hysteresis (0.05 V). These improvements are attributed t...