Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature

Nicholas V Proscia,Zav Shoton,Harishankar Jayakumar,Prithvi Reddy, Michael Dollar,Marcus Doherty,Audrius Alkauskas,Carlos A. Meriles,Vinod M. Menon

2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2018）

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摘要

Room temperature quantum emitter arrays are created in hexagonal Boron Nitride (hBN) by deterministic activation via strain engineering on a nanopillar substrate. Emitters are localized at pillar edges where the hBN film undergoes maximum strain.

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关键词

room temperature quantum emitter arrays,hexagonal boron nitride,strain,nanopillar substrate,thin film,temperature 293 K to 298 K,BN

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