Proposing a Solution for Single-Event Upset in 1T1R RRAM Memory Arrays

Resistive random access memory (RRAM) is a promising emerging technology to provide nonvolatile and scalable data storage in advanced technologies. As a noncharge-based device, the intrinsic RRAM device is immune to single-event effects. However, single-event upset (SEU) due to the MOSFET in the one-transistor-one-RRAM (1T1R) array can be observed. A novel methodology, which can be easily integrat...