Bright Electroluminescence from Back-Gated WSe 2 P-N Junctions Using Pulsed Injection

conference on lasers and electro optics(2018)

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摘要
We demonstrate bright electroluminescence in WSe 2 monolayers using pulsed injection, without the use of split gates, chemical doping, or heterostructures. Electroluminescence quantum efficiency approaches that of photoluminescence, indicating efficient exciton formation with injected carriers.
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关键词
monolayers,exciton,injected carriers,electroluminescence quantum efficiency,pulsed injection,P-N junctions,bright electroluminescence,WSe2
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