Dilute-Bismide Alloys For Gasb-Based Mid-Infrared Semiconductor Lasers

Scott D. Sifferman,M. Motyka,Andrew Briggs,Kenneth J. Underwood,Kyle M. McNicholas,R. Kudrawiec,Juliet T. Gopinath,Seth R. Bank

2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2018）

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摘要

Incorporation of bismuth into III-V emitters typically results in dramatically reduced luminescence efficiency. We present type-I dilute-bismide III-V quantum wells exhibiting enhanced photoluminescence near 4 mu m, suggesting a viable route to extend diode laser emission.

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关键词

diode laser emission,dilute-bismide alloys,III-V emitters,enhanced photoluminescence,luminescence efficiency,mid-infrared semiconductor lasers,type-I dilute bismide III-V quantum wells,GaSb:Bi

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