A Current Transient Method For Trap Analysis In Bifeo3 Thin Films

We present a method to study the trap characteristics in BiFeO3 thin films, which display a resistance switching effect caused by trapping/detrapping of charge carriers. The method consists of measuring the current transients for the detrapping of charge carriers from trap sites and subsequent analysis of the time constant from the current transient curve. Using this method, the energy level of the traps was identified to be 0.71 +/- 0.06 eV. The parameters of the trapping pulses (voltage and time duration) were found to affect the time constant, indicating a close relationship between the escape frequency of the charge carriers and the structure ordering caused by polarization and the filling of the traps. Published by AIP Publishing.