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Universal Core Model for Multiple-Gate Field-Effect Transistors with Short Channel and Quantum Mechanical Effects

Yong Hyeon Shin,Min Soo Bae,Chuntaek Park,Joung Won Park,Hyunwoo Park, Yong Ju Lee,Ilgu Yun

SEMICONDUCTOR SCIENCE AND TECHNOLOGY（2018）

Cited 7|Views9
Key words
universal core model,multiple-gate FETs,charge model,short channel effects,quantum mechanical effects
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