High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P+/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus enabling lower tunneling noise and better timing jitter as well as a ...