High-Electron-Mobility Inn Epilayers Grown On Silicon Substrate

High-electron-mobility InN epilayers are achieved under the extremely In-rich condition on Si (111) substrates by molecular beam epitaxy. A directly probed electron mobility of 3640 cm 2 V-1 s(-1) and a residual electron concentration of 2.96 x 10(17) cm(-3) are detected by Hall-effect measurements at room temperature, which corresponds to a remarkable mobility of 3970 cm(2) V-1 s(-1) and an electron concentration of 2.45 x 10(17) cm(-3) in the InN bulk layer taking into account the electron accumulation layers with a density of 5.83 x 10(13) cm(-2) and a mobility of 429 cm(2)/V s. It is found that extremely the In-rich growth condition is most likely favorable to suppress impurity incorporation and weaken the dislocation scattering due to low proportionally charged dislocations, hence leading to high electron mobility. Published by AIP Publishing.