Improved Model for Excess Base Current in Irradiated Lateral p-n-p Bipolar Junction Transistors

B. S. Tolleson,Philippe C. Adell,B.G. Rax,Hugh J. Barnaby,A. Privat,X. Han,A. Mahmud,I. Livingston

IEEE Transactions on Nuclear Science（2018）

引用 14|浏览22

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摘要

An improved total ionizing dose model for lateral p-n-p bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

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关键词

Integrated circuit modeling,Mathematical model,Silicon,Transistors,Junctions,Doping,Ionizing radiation

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