Circuit simulation of a silicon-carbide MOSFET considering the effect of the parasitic elements on circuit boards by using S-parameters

In this study, we investigate how the switching behaviors of silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are affected by the parasitic elements of a printed circuit board (PCB) on which the devices are mounted. The simulation methodology by using S-parameters is detailed for precisely estimating the effects. Electro-magnetic simulation is used to obtain the S-parameters of the PCB designed for obtaining the switching behaviors of SiC MOSFETs. These S-parameters represent the parasitic elements of the PCB, and circuit simulation utilizing these S-parameters can accordingly reflect the effects of the PCB parasitics. The simulation results of the switching transient waveforms of SiC MOSFETs agree well with the measured switching behaviors of the devices.