Modeling of Advanced RF Bulk FinFETs

The modeling of the advanced RF bulk FinFETs is presented in this letter. Extensive S-parameter measurements, performed on the advanced RF bulk FinFETs, show 31% improvement in cutoff frequency over recent work [1]. The transistor's characteristics are dominated by substrate parasitics at intermediate frequencies (0.1-10 GHz) and gate parasitics at high frequencies (above 10 GHz). The Berkeley sho...