On The Manifestation Of Ge Pre-Amorphization Implantation (Pai) Impact On Both The Formation Of Ultrathin Tisix And The Specific Contact Resistivity In Tisix/N-Si Contacts For Sub-16/14 Nm Nodes And Beyond

Owing to inherent advantages compared to Ni-based contacts adopted in previous nodes, ultrathin TiSi x /n-Si (0 x /n-Si Ohmic contacts has been utilized extensively, the aborative exploration of the impact of Ge PAI on both the formation of ultrathin TiSi x and the electrical performance in TiSi x /n-Si contacts is still of great interest and practical merit. We here investigate the impact of different Ge PAI conditions on the formation of ultrathin TiSi x as well as on the specific contact resistivity (ρ c ) in TiSi x /n-Si contacts systematically.