Engineering Negative Differential Resistance in NCFETs for Analog Applications
IEEE Transactions on Electron Devices(2018)
摘要
In negative capacitance field-effecttransistors (NCFETs), drain current may decrease with increasing Vds in the saturation region, leading to negative differential resistance (NDR). While NDR is useful for oscillator design, it is undesirable for most analog circuits. On the other hand, the tendency toward NDR may be used to reduce the normally positive output conductance (g ds) of a shortchannel ...
更多查看译文
关键词
Logic gates,Capacitance,FinFETs,Integrated circuit modeling,Computational modeling,Analytical models
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要