Comparative Study of Cross-Point MRAM Array With Exponential and Threshold Selectors for Read Operation

We investigate a tunnel magnetoresistance (TMR) ratio of magnetoresistive random access memory (MRAM) devices with selectors classified as exponential and threshold types for cross-point array applications. Through array-level SPICE simulation, we analyze how the TMR ratio, which can vary with the type of the selector, affects a read-out current ratio in the array. In MRAM arrays with exponential ...