The center for production of single-photon emitters at the electrostatic-deflector line of the Tandem accelerator of LABEC (Florence)

S. Lagomarsino,S. Sciortino,N. Gelli,Assegid Mengistu Flatae,Federico A. Gorelli,Mario Santoro,M. Chiari, Caroline Czelusniac,M. Massi,F. Taccetti,Mario Agio,L. Giuntini

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms（2018）

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摘要

•A facility for ion implantation in large energy (100 keV to 10 MeV) and fluency (108–1015 cm−2) ranges.•Single-photon emission from SiV color centers created in diamond.•Independence of the thermal activation yield of SiV centers on the implantation depth, from 0.5 μm to 2.4 μm.

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关键词

Ion implantation,Pulsed ion beams,Single-photon emitters,Silicon-vacancy centers in diamond

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