Graphene Synthesis Using a CVD Reactor and a Discontinuous Feed of Gas Precursor at Atmospheric Pressure

The present work shows a new method in order to cost-effectively achieve the synthesis of graphene by Chemical Vapor Deposition (CVD). Unlike most usual processes, where precursors such as argon, H-2, CH4, and high purity copper foil are used, the proposed method has replaced the previous ones by N-2, N-2 (90%) : H-2 (10%), C2H2, and electrolytic copper (technical grade) since the use of industrialized precursors helps reduce production costs. On the other hand, the process was modified from a continuous flow system with vacuum to a discontinuous one at atmospheric pressure, eliminating the use of vacuum pump. In addition, this modification optimized the consumption of gases, which reduced the waste and the emission of pollutant gases into the atmosphere. Graphene films were grown under different gas flowrates and temperatures. Then, the obtained material was characterized by TEM, Raman spectroscopy, and AFM, confirming the presence of few graphene layers. In brief, the growth time was reduced to six minutes with acetylene as a carbon precursor at 1000 degrees C and at atmospheric pressure, with a flow rate of 30 sccm. Finally, the reported conditions can be used for the synthesis of good quality graphene films in industrial applications.