Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges

Rami Khazaka,Yann Bogumilowicz,Denis Rouchon,Hervé Boutry, Zdenek Chalupa,Valérie Lapras, B. Previtali,Nicolas Chevalier,Anne Marie Papon,Sylvain David,Sylvain Maitrejean

Applied Surface Science（2018）

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摘要

Plan view SEM images of the Ge in the non-optimal “octagonal” cavity shape (left) and in the optimized “square” cavity shape (right). The areas highlighted by red rectangles indicate the facets that should to be removed.

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关键词

Nanostructures,Confined epitaxy,Structural defects

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