Contribution to Silicon-Carbide-MESFET ESD Robustness Analysis

T. Phulpin,K. Isoird,D. Tremouilles,P. Austin,X. Perpinya,J. Leon,M. Vellvehi

IEEE Transactions on Device and Materials Reliability（2018）

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摘要

In this paper, electrostatic discharge (ESD) tests are performed on silicon carbide (SiC) MESFETs in order to understand their physical behavior and failure mechanisms during such stresses. The purpose is to point out advantages and drawbacks of this technology, paying special attention to aspects related to its possible commercialization and reliability. Three MESFETs designed to be integrated as...

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关键词

Electrostatic discharges,Stress,Silicon carbide,MESFETs,Schottky diodes,Failure analysis,Logic gates

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