III-V GaAs and INP HBT devices for 4G & 5G wireless applications

With 5G implementation details still remaining to be defined, it is already clear that the corresponding handset power amplifiers (PAs) will require high-linearity, high-efficiency performance. In this context, the present paper first examines the PA landscape of available candidate technologies and then shows that InP/GaAsSb Double Heterojunction Bipolar Transistors (DHBTs) offer performance differentiating features. Indeed, InP/GaAsSb DHBTs exhibit weaker C _BC variations than other bipolar technologies, a key differentiator of nonlinear performance in bipolar transistors. Some drawbacks of InP DHBT technology are addressed with potential anticipated pathways for solutions.