SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons

This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage of three generations of commercial off-the-shelf static random access memories (SRAMs) manufactured in 130-, 90-, and 65-nm CMOS processes. For this purpose, radiation tests with 14.2-MeV neutrons were performed for SRAM power supplies ranging from 0.5 to 3.15 V. The experimental results yielded cl...