Analysis of ESD Behavior of Stacked nMOSFET RF Switches in Bulk Technology

Matteo Rigato,Clément Fleury,Benedikt Schwarz, Markus Mergens,Sergey Bychikhin,W. Simburger,D. Pogany

IEEE Transactions on Electron Devices（2018）

引用 12|浏览47

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摘要

The operation of stacked MOSFET circuit for RF switch application under electrostatic discharge (ESD) conditions is studied by transmission line pulse (TLP) and transient interferometric mapping (TIM) techniques combined with circuit simulation. TLP pulses with 100-840 ns durations were applied to the device composed of 16 stacked multifinger MOSFET blocks with gate and drain resistors, fabricated...

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关键词

Logic gates,Radio frequency,MOSFET,Optical switches,Electrostatic discharges

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