Monolithic Optical Transceivers In 65 Nm Bulk Cmos

2018 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC)(2018)

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摘要
We present the integration of optical passive and active components next to millions of nanoscale bulk silicon transistors through a single deposited layer of polysilicon on silicon oxide islands. We demonstrate 10 Gb/s monolithic O-band optical transceivers on this platform.
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关键词
optical passive components,active components,nanoscale bulk silicon transistors,silicon oxide islands,monolithic O-band optical transceivers,monolithic optical transceivers,bulk CMOS,single deposited layer,size 65.0 nm,bit rate 10 Gbit/s,SiO
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